Optical properties associated with strain relaxations in thick InGaN epitaxial films-Reference-Cited by-同舟云学术

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Optical properties associated with strain relaxations in thick InGaN epitaxial films

Published:2014-02-18 Issue:S2 Volume:22 Page:A416
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Tsai Wen-Che,Hsu Chia-He,Fu Shao-Fu,Lee Fang-Wei,Chen Chin-Yu,Chou Wu-Ching,Chen Wei-Kuo,Chang Wen-Hao

Funder

National Science Council Taiwan (NSC)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference34 articles.

1. Solid-State Light Sources Getting Smart

2. Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors

3. InGaN/GaN nanorod array white light-emitting diode

4. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system

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1. X-Rays Diffraction Study of InGaN/GaN Heterostructures Grown by MOCVD Technique at Different Temperatures;Defect and Diffusion Forum;2023-05-31

2. Long wavelength red to green emissions from {11 2¯ 2} semipolar multi-quantum wells on fully relaxed InGaN underlayer;Japanese Journal of Applied Physics;2022-11-14

3. Epitaxial Lateral Overgrowth of {11-22} InGaN Layers Using Patterned InGaN Template and Improvement of Optical Properties from Multiple Quantum Wells;Crystals;2022-09-27

4. Raman spectra of semi-polar (11-22) InGaN thick films;Vibrational Spectroscopy;2022-03

5. The dependence of indium incorporation on specified temperatures in growing InGaN/GaN heterostructure using MOCVD technique;Materials Research Bulletin;2021-05

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