Amorphous silicon solar cells with graded boron‐doped active layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331857
Reference4 articles.
1. Analysis of Conversion Efficiency of Large Area a-Si: H Solar Cells
2. Preparation and Photovoltaic Characteristics of a-Si Solar Cells Produced by a Consecutive, Separated Reaction Chamber Method
3. Effect of boron doping and its profile on characteristics of p-i-n a-Si:H solar cells
4. Properties and structure ofa‐SiC:H for high‐efficiencya‐Si solar cell
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1. High quality hydrogenated amorphous silicon oxide film and its application in thin film silicon solar cells;Current Applied Physics;2011-01
2. Simulation of Quantum Efficiency Spectroscopy for Amorphous Silicon P-I-N Junctions;MRS Proceedings;1999
3. References;The Physics and Applications of Amorphous Semiconductors;1988
4. Use of a carbon‐alloyed graded‐band‐gap layer at thep/iinterface to improve the photocharacteristics of amorphous silicon alloyedp‐i‐nsolar cells prepared by photochemical vapor deposition;Journal of Applied Physics;1987-04-15
5. Characterization of hydrogenated amorphous silicon by capacitance‐voltage and surface photovoltage measurements using liquid Schottky barriers;Journal of Applied Physics;1987-03
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