Characterization of hydrogenated amorphous silicon by capacitance‐voltage and surface photovoltage measurements using liquid Schottky barriers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.338038
Reference34 articles.
1. Collection length of holes in a‐Si:H by surface photovoltage using a liquid Schottky barrier
2. Theory and experiment on the surface‐photovoltage diffusion‐length measurement as applied to amorphous silicon
3. Effects of low level boron doping of the i-layer on the performance of SiC p-i-n devices
4. A Demountable Electrolyte Contact Cell
5. Validity of quasi-static capacitance-voltage measurements applied to hydrogenated amorphous silicon diodes
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1. Surface photovoltage phenomena: theory, experiment, and applications;Surface Science Reports;1999-12
2. Relationship between carrier diffusion lengths and defect density in hydrogenated amorphous silicon;Journal of Applied Physics;1997-02
3. Spatially resolved space‐charge density in the hydrogenated amorphous silicon Schottky barrier from surface photovoltage measurements;Journal of Applied Physics;1990-05-15
4. Review of progress on a-Si alloy solar cell research;Solar Cells;1989-10
5. Re-Examination of Carrier Trapping Models for Light-Induced Changes in Hydrogenated Amorphous Silicon;Japanese Journal of Applied Physics;1989-07-20
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