Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2-Reference-Cited by-同舟云学术

Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2

Published:2016-09-28 Issue:12 Volume:120 Page:125102
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Mirabelli Gioele¹,McGeough Conor²^ORCID,Schmidt Michael¹^ORCID,McCarthy Eoin K.³^ORCID,Monaghan Scott¹,Povey Ian M.¹^ORCID,McCarthy Melissa¹,Gity Farzan¹^ORCID,Nagle Roger¹,Hughes Greg²,Cafolla Attilio²,Hurley Paul K.¹,Duffy Ray¹

Affiliation:

1. Tyndall National Institute, University College Cork, Cork, Ireland

2. School of Physical Sciences, Dublin City University, Dublin 9, Ireland

3. Advanced Microscopy Laboratory, Trinity College Dublin, Dublin, Ireland

Funder

Science Foundation Ireland (SFI)

Irish Research Council

Higher Education Authority (HEA)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4963290

Reference29 articles.

1. Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances

2. Impurities and Electronic Property Variations of Natural MoS2 Crystal Surfaces

3. Work function variation of MoS2 atomic layers grown with chemical vapor deposition: The effects of thickness and the adsorption of water/oxygen molecules

4. Structural and Electrical Investigation of MoS2Thin Films Formed by Thermal Assisted Conversion of Mo Metal

5. Oxygen environmental and passivation effects on molybdenum disulfide field effect transistors

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