Characterization of high purity GaAs grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93159
Reference12 articles.
1. Recent developments in molecular beam epitaxy (MBE)
2. Optical and electrical properties of Mn‐doped GaAs grown by molecular‐beam epitaxy
3. Nonalloyed Ohmic contacts ton‐GaAs by molecular beam epitaxy
4. The photoluminescence spectrum of bound excitons in indium phosphide and gallium arsenide
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