Distinguishability of N composition profiles in SiON films on Si by angle-resolved x-ray photoelectron spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2363955
Reference20 articles.
1. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
2. Thin films and interfaces in microelectronics: composition and chemistry as function of depth
3. Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy
4. Structural stability of ultrathin silicon oxynitride film improved by incorporated nitrogen
5. Chemical depth profile of ultrathin nitrided SiO2 films
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