CdS/Cu(In,Ga)Se2 interface formation in high-efficiency thin film solar cells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3481405
Reference13 articles.
1. 19·9%-efficient ZnO/CdS/CuInGaSe2 solar cell with 81·2% fill factor
2. Solar cell efficiency tables (Version 31)
3. Observation of intermixing at the buried CdS/Cu(In, Ga)Se2 thin film solar cell heterojunction
4. Sulfur gradient-driven Se diffusion at the CdS/CuIn(S,Se)2 solar cell interface
5. XPS: Energy calibration of electron spectrometers. 2—Results of an interlaboratory comparison
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1. Chemical and Electronic Structure at the Interface between a Sputter‐Deposited Zn(O,S) Buffer and a Cu(In,Ga)(S,Se)2 Solar Cell Absorber;Solar RRL;2023-04-07
2. Using the inelastic background in hard x-ray photoelectron spectroscopy for a depth-resolved analysis of the CdS/Cu(In,Ga)Se2 interface;Journal of Vacuum Science & Technology A;2021-12
3. Chemical Structure of a Carbon-Rich Layer at the Wet-Chemical Processed Cu2ZnSn(S,Se)4/Mo Interface;IEEE Journal of Photovoltaics;2021-05
4. First-principles insights into the electronic structure, optical and band alignment properties of earth-abundant Cu2SrSnS4 solar absorber;Scientific Reports;2021-02-26
5. Influence of Sulfur Evaporation during or after KF-Post Deposition Treatment On Cu(In,Ga)Se2/CdS Interface Formation;ACS Applied Materials & Interfaces;2020-09-16
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