Using the inelastic background in hard x-ray photoelectron spectroscopy for a depth-resolved analysis of the CdS/Cu(In,Ga)Se2 interface-Reference-Cited by-同舟云学术

Using the inelastic background in hard x-ray photoelectron spectroscopy for a depth-resolved analysis of the CdS/Cu(In,Ga)Se2 interface

Published:2021-12 Issue:6 Volume:39 Page:063216
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A
language:en
Short-container-title:Journal of Vacuum Science & Technology A

Author:

Hauschild Dirk¹²³^ORCID,Steininger Ralph¹^ORCID,Hariskos Dimitrios⁴^ORCID,Witte Wolfram⁴^ORCID,Tougaard Sven⁵^ORCID,Heske Clemens¹²³^ORCID,Weinhardt Lothar¹²³^ORCID

Affiliation:

1. Institute for Photon Science and Synchrotron Radiation (IPS), Karlsruhe Institute of Technology (KIT), Eggenstein-Leopoldshafen 76344, Germany

2. Institute for Chemical Technology and Polymer Chemistry (ITCP), Karlsruhe Institute of Technology (KIT), Karlsruhe 76131, Germany

3. Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), Las Vegas, Nevada 89154

4. Zentrum für Sonnenenergie-und Wasserstoff-Forschung Baden-Württemberg (ZSW), Meitnerstraße 1, 70563 Stuttgart, Germany

5. Department of Physics, Chemistry and Pharmacy, University of Southern Denmark, DK-5230 Odense M, Denmark

Funder

Bundesministerium für Wirtschaft und Energie

Deutsche Forschungsgemeinschaft

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://avs.scitation.org/doi/pdf/10.1116/6.0001336

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Introduction to reproducible laboratory hard x-ray photoelectron spectroscopy;Journal of Vacuum Science & Technology A;2024-07-15

2. Conduction Band Cliff at the CdS/CuIn_0.1Ga_0.9Se₂ Thin-Film Solar Cell Interface;The Journal of Physical Chemistry C;2023-12-20

3. HAXPES: Inelastic background for characterization of nanostructured materials;Surface and Interface Analysis;2023-11-28

4. Chemical and Electronic Structure at the Interface between a Sputter‐Deposited Zn(O,S) Buffer and a Cu(In,Ga)(S,Se)₂ Solar Cell Absorber;Solar RRL;2023-04-07