Hall effect measurement for precise sheet resistance and thickness evaluation of Ruthenium thin films using non-equidistant four-point probes-Reference-Cited by-同舟云学术

Hall effect measurement for precise sheet resistance and thickness evaluation of Ruthenium thin films using non-equidistant four-point probes

Published:2018-05 Issue:5 Volume:8 Page:055206
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Østerberg Frederik Westergaard¹²^ORCID,Witthøft Maria-Louise¹^ORCID,Dutta Shibesh³⁴^ORCID,Meersschaut Johan³^ORCID,Adelmann Christoph³^ORCID,Nielsen Peter Folmer²^ORCID,Hansen Ole¹^ORCID,Petersen Dirch Hjorth¹

Affiliation:

1. DTU Nanotech - Department of Micro- and Nanotechnology, Technical University of Denmark, Building 345 East, DK-2800 Kongens Lyngby, Denmark

2. CAPRES A/S, Scion-DTU, Building 373, DK-2800 Kongens Lyngby, Denmark

3. Imec, Kapeldreef 75, 3001 Leuven, Belgium

4. KU Leuven, Department of Physics and Astronomy, Celestijnenlaan 200d, 3001 Leuven, Belgium

Funder

Innovation Fund Denmark

H2020 LEIT Information and Communication Technologies

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5010399

Reference20 articles.

1. D. K. Schroder,Semiconductor Material and Device Characterization(John Wiley & Sons, 2006) p. 800.

2. The 100th anniversary of the four-point probe technique: the role of probe geometries in isotropic and anisotropic systems

3. Microfour-point probe for studying electronic transport through surface states

4. Scanning microscopic four-point conductivity probes

5. Review of electrical characterization of ultra-shallow junctions with micro four-point probes

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1. Ruthenium-Assisted Chemical Etching of Silicon: Enabling CMOS-Compatible 3D Semiconductor Device Nanofabrication;ACS Applied Materials & Interfaces;2020-12-22

2. A variable probe pitch micro-Hall effect method;Beilstein Journal of Nanotechnology;2018-07-20