Transmission electron microscopy analysis of heavily As‐doped, laser, and thermally annealed layers in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360271
Reference11 articles.
1. Solid solubility of As in Si as determined by ion implantation and cw laser annealing
2. Nonequilibrium solid solutions obtained by heavy ion implantation and laser annealing
3. Electron Microscopy of As Supersaturated Silicon
4. Electrical activity and structural evolution correlations in laser and thermally annealed As‐implanted Si specimens
5. Pulsed electron beam annealing of arsenic‐implanted silicon
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1. Electrical Activation, Deactivation, and Reactivation Mechanism Study of Plasma Doping Processes;IEEE Transactions on Electron Devices;2015-06
2. Characterization of the Depth Distribution and Electrical Activation and Deactivation of Ion Implanted Dopants in Silicon;IEEE Transactions on Electron Devices;2014-11
3. Observation of point defect injection from electrical deactivation of arsenic ultra-shallow distributions formed by ultra-low energy ion implantation and laser sub-melt annealing;physica status solidi (c);2013-12-09
4. Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-01
5. Defects in Ultra-Shallow Junctions;Defects in Microelectronic Materials and Devices;2008-11-19
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