Electrical properties of the Sm2Ti2O7 thin films for metal-insulator-metal capacitor applications
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2718277
Reference22 articles.
1. High-density MIM capacitors using Al2O3 and AlTiOx dielectrics
2. A capacitorless double-gate DRAM cell
3. PVD HfO2 for high-precision MIM capacitor applications
4. Evidence and Understanding of ALD<tex>$hbox HfO_2hbox --hbox Al_2hbox O_3$</tex>Laminate MIM Capacitors Outperforming Sandwich Counterparts
5. Atomic layer deposition of ZrO2 on W for metal–insulator–metal capacitor application
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2. Resistive switching properties of amorphous Sm2Ti2O7 thin film prepared by RF sputtering for RRAM applications;Journal of Alloys and Compounds;2022-07
3. Structural and electrical studies of excessively Sm2O3 substituted soft PZT nanoceramics;Ceramics International;2021-11
4. Effects on Phase Evolution of La2O3–ZrO2 Mixed Oxides Prepared Via Sol–Gel Process and its Crystal Growth Behavior;Journal of Inorganic and Organometallic Polymers and Materials;2017-11-13
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