Elemental boron‐dopedp+‐SiGe layers grown by molecular beam epitaxy for infrared detector applications
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106663
Reference6 articles.
1. Room-temperature-operated infrared image CCD sensor using pyroelectric gate coupled by dielectric connector
2. Heavily boron‐doped Si layers grown below 700 °C by molecular beam epitaxy using a HBO2source
3. Boron doping using compound source
4. GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy
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