Dependence of hole transport on Ga doping in Si molecular beam epitaxy layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96659
Reference13 articles.
1. Doping of silicon in molecular beam epitaxy systems by solid phase epitaxy
2. Sharp profiles with high and low doping levels in silicon grown by molecular beam epitaxy
3. Heavy Doping Effects in Silicon
4. The dopant density and temperature dependence of hole mobility and resistivity in boron doped silicon
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