The dopant density and temperature dependence of hole mobility and resistivity in boron doped silicon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference32 articles.
1. Hole drift velocity in silicon
2. Ohmic mobility of holes in silicon
3. Electrical Properties of Silicon Containing Arsenic and Boron
4. Ph.D. dissertation;Braggins,1975
5. Drift Mobilities in Semiconductors. II. Silicon
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