Temperature dependence of the thermal conductivity of hydroxide catalysis bonds between silicon substrates

Abstract

Abstract Future generations of gravitational wave detectors plan to use cryogenics in order to further reduce thermal noise associated with the mirror test masses and their suspensions. It is important that the thermal conductivity of candidate materials for these mirror suspension systems, and any additional thermal resistance associated with the required bonding/jointing, is characterised. Results are presented here for composite single-crystal silicon substrates, with multiple hydroxide catalysis bonds present, in order to assess the thermal conductivity of the bond layers. An average bond thickness of 460   nm is observed within the oxide-bond-oxide interfaces, with a calculated thermal conductivity rising from 0.013 → 0.087   Wm−1K−1 across a temperature range of 9 → 300 K. This confirms that the thermal conductance through hydroxide catalysis bonds, with geometries being considered for third generation gravitational wave detectors operating at 20 K or 125 K, would have a negligible impact on the required heat extraction for cryogenic operation. Therefore, the use of hydroxide catalysis bonding, as successfully demonstrated within room temperature gravitational wave detectors, remains an attractive solution for building future cryogenic instruments with reduced thermal noise and enhanced astrophysical reach.