Study of stress in a shallow-trench-isolated Si structure using polarized confocal near-UV Raman microscopy of its cross section
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2825286
Reference8 articles.
1. High-spatial-resolution Raman microscopy of stress in shallow-trench-isolated Si structures
2. Raman spectroscopy of strain in subwavelength microelectronic devices
3. Piezo-Raman measurements and anharmonic parameters in silicon and diamond
4. Effect of static uniaxial stress on the Raman spectrum of silicon
5. Stress-Induced Shifts of First-Order Raman Frequencies of Diamond- and Zinc-Blende-Type Semiconductors
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