Isoelectronic centers and type-II quantum dots: Mechanisms for the green band emission in ZnSeTe alloy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3139269
Reference19 articles.
1. Exciton self-trapping in ZnSe-ZnTe alloys
2. Isoelectronicδdoping in a ZnSe superlattice: Tellurium as an efficient hole trap
3. Free-exciton luminescence fromZnSe1−xTex
4. Photoluminescence of excitons bound at Te isoelectronic traps in ZnSe
5. Optical properties ofδ-doped ZnSe:Te grown by molecular beam epitaxy: The role of tellurium
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1. Design of Distributed Bragg Reflectors for Green Light-Emitting Devices Based on Quantum Dots as Emission Layer;Energies;2022-02-08
2. Isoelectronic Centers in Quantum Dots and Photoluminescence Decay;Springer Proceedings in Physics;2013
3. A case study: Te in ZnSe and Mn-doped ZnSe quantum dots;Nanotechnology;2011-06-27
4. Growth of ZnSe(1−x)Tex epilayers by isothermal closed space sublimation;Journal of Applied Physics;2010-05-15
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