Abstract
Light-emitting diodes based on quantum dots as an active emission can be considered as a promising next generation for application in displays and lighting. We report a theoretical investigation of green emission at 550 nm of microcavity inorganic–organic light-emitting devices based on Zn (Te, Se) alloy quantum dots as an active layer. Distributed Bragg Reflector (DBR) has been applied as a bottom mirror. The realization of high-quality DBR consisting of both high and low refractive index structures is investigated. The structures applied for high refractive index layers are (ZrO2, SiNx, ZnS), while those applied for low index layers are (Zr, SiO2, CaF2). DBR of ZnS/CaF2 consisting of three pairs with a high refractive index step of (Δn = 0.95) revealed a broad stop bandwidth (178 nm) and achieved a high reflectivity of 0.914.
Funder
Research Center for Advanced Material Science (RCAMS) at King Khalid University
Subject
Energy (miscellaneous),Energy Engineering and Power Technology,Renewable Energy, Sustainability and the Environment,Electrical and Electronic Engineering,Control and Optimization,Engineering (miscellaneous)
Cited by
1 articles.
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