Impacts of reduction of deep levels and surface passivation on carrier lifetimes in p-type 4H-SiC epilayers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3583657
Reference29 articles.
1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
2. Status and prospects for SiC power MOSFETs
3. Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC Epilayers
4. Lifetime-limiting defects in n− 4H-SiC epilayers
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4. High-voltage SiC power devices for improved energy efficiency;Proceedings of the Japan Academy, Series B;2022-04-11
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