Author:
Heuer M.,Buonassisi T.,Istratov A. A.,Pickett M. D.,Marcus M. A.,Minor A. M.,Weber E. R.
Subject
General Physics and Astronomy
Cited by
27 articles.
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1. Temperature and excitation power dependence of photoluminescence and electrical characterization of Ni‐passivated porous silicon;Journal of Materials Science: Materials in Electronics;2021-01-19
2. Tem Analysis of Diffusion-Bonded Silicon Carbide Ceramics Joined Using Metallic Interlayers;Proceedings of the 41st International Conference on Advanced Ceramics and Composites;2018-03-02
3. Electrical Properties of Metals in Si and Ge;Metal Impurities in Silicon- and Germanium-Based Technologies;2018
4. Electrical Activity of Iron and Copper in Si, SiGe and Ge;Metal Impurities in Silicon- and Germanium-Based Technologies;2018
5. Plasma immersion ion implantation: A viable candidate for low cost purification of mc-Si by nanocavities?;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-01