An x‐ray topographic study of β‐SiC films on Si substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.338033
Reference14 articles.
1. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
2. Schottky barrier diodes on 3C‐SiC
3. High‐temperature electrical properties of 3C‐SiC epitaxial layers grown by chemical vapor deposition
4. Chemically-formed buffer layers for growth of cubic silicon carbide on silicon single crystals
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Some aspects of SiC CVD epitaxy;Semiconductors;2001-10
2. X-ray double crystal and X-ray topographic characterization of silicon carbide thin films on silicon, titanium carbide, 6H-silicon carbide, and aluminum nitride/sapphire substrates;Thin Solid Films;1996-03
3. Nondestructive evaluation of silicon‐on‐insulator substrates using x‐ray double crystal topography;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1992-07
4. Characterization of silicon on insulator substrates using reflection mode double-crystal X-ray topography;Thin Solid Films;1991-12
5. Preparation and Properties of Polycrystalline Silicon Carbide Films Produced by Plasma Enhanced Chemical Vapor Deposition, and Their Applications;Amorphous and Crystalline Silicon Carbide and Related Materials;1989
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