STS observations of deep defects within laser-illuminated graphene/MOVPE-h-BN heterostructures-Reference-Cited by-同舟云学术

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STS observations of deep defects within laser-illuminated graphene/MOVPE-h-BN heterostructures

Published:2019-03-11 Issue:10 Volume:114 Page:102103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wlasny I.¹^ORCID,Pakula K.¹,Stepniewski R.¹,Strupinski W.²,Pasternak I.²^ORCID,Baranowski J. M.³,Wysmolek A.¹^ORCID

Affiliation:

1. Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland

2. Faculty of Physics, Warsaw University of Technology (WUT), Koszykowa 75, 00-662 Warsaw, Poland

3. Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland

Funder

EU Graphene Flagship Core 2

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5081487

Reference32 articles.

1. The rise of graphene

2. Klein paradox in the graphene-based double-barrier structures: A real-space Green function study

3. Optoelectromechanical Multimodal Biosensor with Graphene Active Region

4. Recent Advances in Synthesis and Biomedical Applications of Two-Dimensional Transition Metal Dichalcogenide Nanosheets

5. Signatures of Phonon and Defect-Assisted Tunneling in Planar Metal–Hexagonal Boron Nitride–Graphene Junctions

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature induced giant shift of phonon energy in epitaxial boron nitride layers;Nanotechnology;2022-10-17

2. Atomic-level defect modulation and characterization methods in 2D materials;APL Materials;2021-10-01

3. Building Functional Memories and Logic Circuits with 2D Boron Nitride;Advanced Functional Materials;2020-09-28

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