Epitaxial growth of BaTiO3/ZnO heterojunctions and transition from rectification to bipolar resistive switching effect-Reference-Cited by-同舟云学术

Epitaxial growth of BaTiO3/ZnO heterojunctions and transition from rectification to bipolar resistive switching effect

Published:2017-09-11 Issue:11 Volume:111 Page:113506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jia Caihong¹,Yin Xiaoqian¹,Yang Guang¹,Wu Yonghui¹,Li Jiachen¹,Chen Yonghai²³,Zhang Weifeng¹

Affiliation:

1. Henan Key Laboratory of Photovoltaic Materials, Laboratory of Low-Dimensional Materials Science, School of Physics & Electronics, Henan University, Kaifeng 475004, People's Republic of China

2. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China

3. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China

Funder

Key scientific research projects of Henan Province

National Natural Science Foundation of China (NSFC)

Natural Science Foundation of Henan Province (Henan Province Natural Science Foundation)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4992142

Reference25 articles.

1. Interface polarization coupling in piezoelectric-semiconductor ferroelectric heterostructures

2. Electrooptic ellipsometry study of piezoelectric BaTiO3-ZnO heterostructures

3. Resistive hysteresis and interface charge coupling in BaTiO3-ZnO heterostructures

4. Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions

5. Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier

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