The light-modified resistance switching of BaTiO3/ZnO films

Abstract

A light-modified resistance switching (RS) memory device with BaTiO3 / ZnO structure is fabricated by radio frequency magnetron sputtering technology. The device exhibits stable resistive switching behavior in the dark and under illumination, respectively. In the dark, the device’s high/low resistance ratio ([Formula: see text] / [Formula: see text] is more than 104 at 0.1 V read voltage, and the set/reset voltage ([Formula: see text] < 0.4 V, [Formula: see text] > −0.2 V) is low. The RS of the device can be modulated by white light. When the device is irradiated by white light with intensity of 250 uw/cm2, the high/low resistance ratio is modulated from 104 to 102, and the set/reset voltage ([Formula: see text] < 0.3 V, [Formula: see text] > −0.2 V) is still low.