Low temperature direct bonding mechanisms of tetraethyl orthosilicate based silicon oxide films deposited by plasma enhanced chemical vapor deposition-Reference-Cited by-同舟云学术

Low temperature direct bonding mechanisms of tetraethyl orthosilicate based silicon oxide films deposited by plasma enhanced chemical vapor deposition

Published:2012-09-15 Issue:6 Volume:112 Page:063501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sabbione C.,Di Cioccio L.,Vandroux L.,Nieto J.-P.,Rieutord F.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4752258

Reference19 articles.

1. Q.Y. Tong and U. Gösele, Semiconductor Wafer Bonding: Science and Technology (Wiley, New York, 1999), pp. 17–24 and pp. 103–106.

2. Physics of direct bonding: Applications to 3D heterogeneous or monolithic integration

3. Effect of nanoscale surface roughness on the bonding energy of direct-bonded silicon wafers

4. Low-temperature thermal oxide to plasma-enhanced chemical vapor deposition oxide wafer bonding for thin-film transfer application

5. Wafer bonding of silicon wafers covered with various surface layers

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