Modulated ion beam studies of product formation and ejection in ion‐induced etching of GaAs by Cl2
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.340022
Reference19 articles.
1. Plasma-assisted etching mechanisms: The implications of reaction probability and halogen coverage
2. Mass and energy distribution of particles sputter etched from Si in a XeF2environment
3. Argon‐ion assisted etching of silicon by molecular chlorine
4. Studies on the mechanism of chemical sputtering of silicon by simultaneous exposure to Cl2 and low-energy Ar+ ions
5. Effects of Ar+ angle of incidence on the etching of Si with Cl2 and low-energy Ar+ ions
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1. Inductively coupled plasma etching in ICl- and IBr-based chemistries. Part II: InP, InSb, InGaP, and InGaAs;Plasma Chemistry and Plasma Processing;2000
2. Ion Beam Etching of Compound Semiconductors;Handbook of Advanced Plasma Processing Techniques;2000
3. Characteristics of inductively coupled Cl2/BCl3 plasmas during GaN etching;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1999-07
4. Reactive ion beam etching of GaAs and related compounds in an inductively coupled plasma of Cl[sub 2]–Ar mixture;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
5. Gallium arsenide surface chemistry and surface damage in a chlorine high density plasma etch process;Journal of Electronic Materials;1997-11
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