Effects of Ar+ angle of incidence on the etching of Si with Cl2 and low-energy Ar+ ions
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Plasma-surface Interactions in Material Processing;Journal of Physics: Conference Series;2010-11-01
2. Silicon etching in Cl2 environment;Applied Surface Science;2006-11
3. Silicon etching yields in F2, Cl2, Br2, and HBr high density plasmas;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2001-09
4. Ion-Enhanced Etching of Si(100) with Molecular Chlorine: Neutral and Ionic Product Yields as a Function of Ion Kinetic Energy and Molecular Chlorine Flux;The Journal of Physical Chemistry B;2000-02-23
5. Ion-enhanced etching of Si(100) with molecular chlorine: Reaction mechanisms and product yields;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1999-11
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