Ion‐induced chlorination of titanium leading to enhanced etching
Author:
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.455617
Reference23 articles.
1. Ion‐ and electron‐assisted gas‐surface chemistry—An important effect in plasma etching
2. Ion enhanced gas-surface reactions: A kinetic model for the etching mechanism
3. Investigation of kinetic mechanism for the ion-assisted etching of Si in Cl2
4. Ion‐assisted etching of silicon by molecular chlorine
5. Studies on the mechanism of chemical sputtering of silicon by simultaneous exposure to Cl2 and low-energy Ar+ ions
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1. Inductively Coupled Plasma Etching of Bulk Titanium for MEMS Applications;Journal of The Electrochemical Society;2005
2. Real-Time Monitoring in Atomic Layer Deposition of TiO2 from TiI4 and H2O−H2O2;Langmuir;2000-09-23
3. Plasma Assisted Dry Etching of Cobalt Silicide for Microelectronics Applications;Journal of The Electrochemical Society;1996-02-01
4. Vibrational predissociation dynamics and internal rotation in aromatic van der Waals complexes;Applied Physics B Laser and Optics;1994-10
5. Dry etching of Ti in chlorine containing feeds;Journal of Applied Physics;1992-11
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