Real-Time Monitoring in Atomic Layer Deposition of TiO2 from TiI4 and H2O−H2O2-Reference-Cited by-同舟云学术

Real-Time Monitoring in Atomic Layer Deposition of TiO2 from TiI4 and H2O−H2O2

Published:2000-09-23 Issue:21 Volume:16 Page:8122-8128
ISSN:0743-7463
Container-title:Langmuir
language:en
Short-container-title:Langmuir

Author:

Kukli Kaupo¹,Aidla Aleks¹,Aarik Jaan¹,Schuisky Mikael¹,Hårsta Anders¹,Ritala Mikko¹,Leskelä Markku¹

Affiliation:

1. University of Tartu, Institute of Experimental Physics and Technology and Institute of Materials Science, Tähe 4, 51010 Tartu, Estonia, University of Helsinki, Department of Chemistry, P.O. Box 55, FIN-00014 Helsinki, Finland, and Uppsala University, Inorganic Chemistry, The Ångström Laboratory, P.O. Box 538, SE-75121 Uppsala, Sweden

Publisher

American Chemical Society (ACS)

Subject

Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/la0004451

Reference35 articles.

1. Open air plasma chemical vapor deposition of highly dielectric amorphous TiO2 films

2. Surface and bulk reactions of carbon tetrachloride with titanium dioxide

3. A Proton Magnetic Resonance and Gravimetric Study of Water and Isopropanol Adsorption on Microcrystalline Rutile. II. Hydration and Hydroxylation

4. Ion-induced chemical vapor deposition of high purity Cu films at room temperature using a microwave discharge H atom beam source

5. In situ study of atomic layer epitaxy growth of tantalum oxide thin films from Ta(OC2H5)5 and H2O

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