Study of interfacial reaction and its impact on electric properties of Hf–Al–O high-k gate dielectric thin films grown on Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1566796
Reference16 articles.
1. Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications
2. Crystalline Oxides on Silicon: The First Five Monolayers
3. High-resolution depth profiling in ultrathin Al2O3 films on Si
4. Thin films of metal oxides on silicon by chemical vapor deposition with organometallic compounds. I
5. High-κ gate dielectrics: Current status and materials properties considerations
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