Effects of Annealing Ambient on the Characteristics of LaAlO3 Films Grown by Atomic Layer Deposition-Reference-Cited by-同舟云学术

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Effects of Annealing Ambient on the Characteristics of LaAlO3 Films Grown by Atomic Layer Deposition

Published:2017-02-10 Issue:1 Volume:12 Page:
ISSN:1931-7573
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Zhao Lu,Liu Hong-xia,Wang Xing,Fei Chen-xi,Feng Xing-yao,Wang Yong-te

Funder

National Natural Science Foundation of China

Foundation for Fundamental Research of China

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/s11671-017-1889-z.pdf

Reference33 articles.

1. Lee BH, Oh J, Tseng HH, Jammy R, Huff H (2006) Gate stack technology for nanoscale devices. NMDC IEEE 1:206–207

2. Wang X, Liu HX, Fei CX, Yin SY, Fan XJ (2015) Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer. Nanoscale Res Lett 10:141

3. Kim WH, Maeng WJ, Moon KJ, Myoung JM, Kim H (2010) Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition. Thin Solid Films 519:362–6

4. Swaminathan S, Sun Y, Pianetta P, McIntyre PC (2011) Ultrathin ALD-Al2O3 layers for Ge(001) gate stacks: local composition evolution and dielectric properties. J Appl Phys 110:094105

5. Lee BH, Song SC, Choi R, Kirsch P (2008) Metal electrode/high-k dielectric gate-stack technology for power management. IEEE T Electron Dev 55:8–20

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