Localized two‐dimensional electron gas formation by focused Si ion beam implantation into GaAs/AlGaAs heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103908
Reference12 articles.
1. Ion-Species Dependence of Interdiffusion in Ion-Implanted GaAs-AlAs Superlattices
2. One‐dimensional GaAs wires fabricated by focused ion beam implantation
3. Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxes
4. Implantation enhanced interdiffusion in GaAs/GaAlAs quantum structures
5. Magnetotransport through an antidot lattice in GaAs-AlxGa1−xAs heterostructures
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1. In-plane gate transistors implanted with different channel geometries by focussed ion beam in positive mode pattern definition technique;physica status solidi (a);2010-01
2. Fabrication of submicrometer patterned two-dimensional electron gases by overgrowth of focused ion beam doped Al[sub x]Ga[sub 1−x]As;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006
3. Low-Damage Sputtering of GaAs and GaP Using Size-Selected Ar Cluster Ion Beams;Japanese Journal of Applied Physics;2005-01-07
4. Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures;Journal of Applied Physics;2003-05-15
5. Fabrication of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped AlxGa1−xAs;Applied Physics Letters;2003-01-20
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