Is light-induced degradation of a-Si:H/c-Si interfaces reversible?-Reference-Cited by-同舟云学术

Is light-induced degradation of a-Si:H/c-Si interfaces reversible?

Published:2014-06-23 Issue:25 Volume:104 Page:252108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

El Mhamdi El Mahdi¹,Holovsky Jakub¹,Demaurex Bénédicte¹,Ballif Christophe¹,De Wolf Stefaan¹

Affiliation:

1. École Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin Film Electronics Laboratory, Maladière 71, CH-2000 Neuchâtel, Switzerland

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference31 articles.

1. Photovoltaic Technology: The Case for Thin-Film Solar Cells

2. Thin-Film Transistors

3. Light‐induced dangling bonds in hydrogenated amorphous silicon

4. Reversible conductivity changes in discharge‐produced amorphous Si

5. Microstructure and the light‐induced metastability in hydrogenated amorphous silicon

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