On the redox origin of surface trapping in AlGaN/GaN high electron mobility transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4869738
Reference24 articles.
1. A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors
2. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
3. The surface chemistry of amorphous silica. Zhuravlev model
4. General observation of n-type field-effect behaviour in organic semiconductors
5. Hysteresis Caused by Water Molecules in Carbon Nanotube Field-Effect Transistors
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