GaAs photodetectors prepared by high-energy and high-dose nitrogen implantation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2339907
Reference14 articles.
1. Pulsed photoconductive antenna terahertz sources made on ion-implanted GaAs substrates
2. Non-stoichiometric semiconductor materials for terahertz optoelectronics applications
3. Annealing dynamics of nitrogen-implanted GaAs films investigated by current–voltage and deep-level transient spectroscopy
4. Ultrafast and highly sensitive photodetectors fabricated on high-energy nitrogen-implanted GaAs
5. Hydrogen-enhanced recrystallization in N+-implanted GaAs
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