Hydrogenated amorphous silicon films prepared at high substrate temperature: Properties and light induced degradation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353986
Reference11 articles.
1. Deposition of device quality, low H content a-Si:H by the hot wire technique
2. Guiding principle for preparing highly photosensitive Si-based amorphous alloys
3. Nature of Localized States in Hydrogenated Si–Based Amorphous Semiconductor Films Elucidated from LESR and CPM
4. Charged dangling bonds in undoped amorphous silicon
5. Structure and Electronic States in Disordered Systems
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