Charged dangling bonds in undoped amorphous silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106713
Reference14 articles.
1. Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopy
2. Occupancy of dangling bond defects in doped hydrogenated amorphous silicon
3. Electronic structure of hydrogenated amorphous silicon
4. Photoconductivity and light-induced change ina-Si:H
5. Photoconductivity and μτ-products in a-Si:H — compatibility with various defect models
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1. Nonequilibrium Occupancy of Dangling Bond Defects in Undoped Amorphous Silicon Studied by Subgap-Light-Induced Electron Spin Resonance;Japanese Journal of Applied Physics;2004-06-09
2. Light-induced modification of a-SiOx:H. I: Metastability;Journal of Applied Physics;2004-04-15
3. Evolution of D0 and non-D0 Light Induced Defect States in a-Si:H Materials and Their Respective Contribution to Carrier Recombination;MRS Proceedings;2004
4. Photoinduced Effects in Amorphous Semiconductors;Properties and Applications of Amorphous Materials;2001
5. Light-induced creation of metastable defects in hydrogenated amorphous silicon studied by computer simulations of constant photocurrent measurements;Physical Review B;1999-02-15
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