Dislocation glide at a (100) SixGe1−x/Si interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105955
Reference13 articles.
1. Misfit dislocation structure at a Si/SixGe1−xstrained‐layer interface
2. Dislocation structure in InxGa1−xAs/GaAs strained‐layer superlattices
3. Dislocation configurations in Si/SixGe1-x strained layer heterostructures
4. Dislocation constrictions at a Si/SixGe1−xinterface
5. On the determination of the nature of misfit dislocations in semiconductor strained-layer heterostructures
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Dislocation structure and photoluminescence of partially relaxed SiGe layers on Si(001) substrates;Semiconductor Science and Technology;1999-01-01
2. Dissociated screw dislocation which can relieve strain energyin the epitaxial layer of GeSi on Si(001);Physical Review B;1997-04-15
3. Photoluminescence studies of relaxation processes in strained Si1−xGex/Si epilayers;Journal of Applied Physics;1995-07
4. Defect states in Si containing dislocation nets;Physica Status Solidi (a);1994-12-16
5. Estimation of the core cut‐off parameter for misfit dislocations at a SixGe1−x/Si interface;Journal of Applied Physics;1992-06-15
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