On the determination of the nature of misfit dislocations in semiconductor strained-layer heterostructures
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/09500838908206350
Reference13 articles.
1. Dislocation morphology in graded heterojunctions: GaAs1?xPx
2. MODELS OF THE DISLOCATION STRUCTURE
3. Investigations of dislocation strain fields using weak beams
4. The dissociation of dislocations in GaAs
5. Stacking fault energy and ionicity of cubic III–V compounds
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. In-situ direct measurement of activation energies for the generation of misfit dislocations in the InGaAs/GaAs (001) system;Applied Surface Science;1998-01
2. Observation of defects and tetragonal distortions in heterostructures by TEM;Journal of Crystal Growth;1995-11
3. Multiplication of misfit dislocations in InxGa1−xAs/GaAs heterostructures;Philosophical Magazine A;1994-12
4. Cross-slip in the first stages of plastic relaxation in InxGa1-xAs/GaAs heterostructures;Philosophical Magazine A;1994-05-01
5. The study of misfit dislocations in InxGa1-xAs/GaAs strained quantum well structures;Philosophical Magazine A;1992-04
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