Photoreflectance and photoluminescence of partially intermixed GaAs/AlGaAs double quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357199
Reference21 articles.
1. 15 GHz bandwidth quantum well electron transfer intensity modulator at 1.55 μm
2. Novel structure MQW electroabsorption modulator/DFB-laser integrated device fabricated by selective area MOCVD growth
3. Disorder of an AlAs‐GaAs superlattice by impurity diffusion
4. Stripe‐geometry quantum well heterostructure AlxGa1−xAs‐GaAs lasers defined by defect diffusion
5. Quantum well intermixing
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1. Photoreflectance investigations of quantum well intermixing processes in compressively strained InGaAsP∕InGaAsP quantum well laser structures emitting at 1.55μm;Journal of Applied Physics;2006-07
2. THREE-DIMENSIONAL MODEL FOR INTERDIFFUSED QUANTUM DOTS;International Journal of Nanoscience;2005-08
3. GaAs/AlGaAs quantum well intermixing using high-density argon plasma;Semiconductor Science and Technology;2005-01-21
4. Quantum well intermixing of GaAs/AlGaAs laser structure using one-step rapid thermal oxidation of AlAs;SPIE Proceedings;1999-11-12
5. Lateral selectivity of ion-induced quantum well intermixing;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1998-03
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