Ultrarapid crystal growth and impurity segregation in amorphous silicon annealed with shortQ‐switched laser pulses
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92956
Reference13 articles.
1. Spatially controlled crystal regrowth of ion‐implanted silicon by laser irradiation
2. Time‐resolved reflectivity of ion‐implanted silicon during laser annealing
3. Growth interface breakdown during laser recrystallization from the melt
4. Measurement of Lattice Temperature of Silicon during Pulsed Laser Annealing
5. Grain size dependence in a self‐implanted silicon layer on laser irradiation energy density
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