Temperature dependence of polarized absorption bands in p-type CdGeAs2
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1835564
Reference27 articles.
1. ELECTRONIC STRUCTURE OF I-III-VI2 SEMICONDUCTORS
2. Ultralow Gradient HGF-Grown ZnGeP2 and CdGeAs2 and Their Optical Properties
3. Efficient difference-frequency generation of 7–20-µm radiation in CdGeAs_2
4. Temperature and pulse-duration dependence of second-harmonic generation in CdGeAs_2
5. Optical parametric generation in CGA crystal
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1. X-ray study of thermal expansion behaviors and Grüneisen parameters of cadmium germanium arsenide crystal over the temperature range 25–450 °C;Journal of Applied Physics;2013-08-07
2. Growth and characterizations of CdGeAs2 single crystal by descending crucible with rotation method;Rare Metals;2013-08-06
3. Theoretical study of elastic and thermodynamic properties of chalcopyrite CdGeAs2;Physica B: Condensed Matter;2013-05
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