Growth and characterizations of CdGeAs2 single crystal by descending crucible with rotation method-Reference-Cited by-同舟云学术

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Growth and characterizations of CdGeAs2 single crystal by descending crucible with rotation method

Published:2013-08-06 Issue:2 Volume:33 Page:210-214
ISSN:1001-0521
Container-title:Rare Metals
language:en
Short-container-title:Rare Met.

Author:

Huang Wei,Zhao Bei-Jun,Zhu Shi-Fu,He Zhi-Yu,Chen Bao-Jun,Tang Jing-Jing,Liu Wei-Jia

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Metals and Alloys,Physical and Theoretical Chemistry,Condensed Matter Physics

Link

http://link.springer.com/content/pdf/10.1007/s12598-013-0108-z.pdf

Reference16 articles.

1. Iseler G, Kildal H, Menyuk N. Optical and electrical properties of CdGeAs2. J Electron Mater. 1978;7(6):737.

2. Rud V, Rud Y, Ushakova T. Physical properties of CdGeAs2 crystals grown by solid-state synthesis. Semiconductors. 1999;33(11):1193.

3. Magomedov Y, Aidamirov M. Structural disordering and Viedemann–Franz relation in melts of some II–IV–V2 semiconductors. Semiconductors. 2003;37(4):367.

4. Nikogosyan DN. Nonlinear optics crystals (review and summary of data). Sov J Quantum Electron. 1977;7(1):5.

5. Feigelson RS, Route RK, Swarts HW. Solution growth of CdGeAs2. J Cryst Growth. 1975;28(1):138.

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1. Surface treatments of CdGeAs2 single crystals;Rare Metals;2017-02-23

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4. Vibrational modes of chalcopyrite CdGeAs2 crystal;Materials Research Bulletin;2016-09

5. Investigation of thermodynamics properties of chalcopyrite compound CdGeAs2;Journal of Crystal Growth;2016-06

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