Evaluation of stacking faults and associated partial dislocations in AlSb/GaAs (001) interface by aberration-corrected high-resolution transmission electron microscopy-Reference-Cited by-同舟云学术

Evaluation of stacking faults and associated partial dislocations in AlSb/GaAs (001) interface by aberration-corrected high-resolution transmission electron microscopy

Published:2014-11 Issue:11 Volume:4 Page:117135
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Wen C.,Ge B. H.,Cui Y. X.,Li F. H.,Zhu J.,Yu R.,Cheng Z. Y.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/adva/4/11/1.4902893.pdf?itemId=/content/aip/journal/adva/4/11/10.1063/1.4902893&mimeType=pdf&containerItemId=content/aip/journal/adva

Reference39 articles.

1. The family (InAs, GaSb, AlSb) and its heterostructures: a selective review

2. Growth and fabrication issues of GaSb-based detectors

3. Progress in Antimonide Based III-V Compound Semiconductors and Devices

4. Dependence of the AlSb buffers on GaSb/GaAs(001) heterostructures

5. High-resolution transmission electron microscopy study on the growth modes of GaSb islands grown on a semi-insulating GaAs (001) substrate

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