Author:
Mohammedy Farseem M.,Jamal Deen M.
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference70 articles.
1. H. Kroemer, The 6.1 Å family (InAs, GaSb, AlSb) and its heterostructures: a selective review, Physica E 20, 196 (2004)
2. P.S. Dutta, H.L. Bhat and V. Kumar, The physics and technology of gallium antimonide: an emerging optoelectronic material, J. Appl. Phys. 81, 5821 (1997)
3. M.O. Manasreh (ed.), Antimonide-related Strained-Layer Heterostructures, Optoelectronic Properties of Semiconductors and Superlattices, vol. 3 (Gordon and Breach Science Publishers, Amsterdam, 1997)
4. B.R. Bennett, R. Magno, J.B. Boos, W. Kruppa and M.G. Ancona, Antimonide-based compound semiconductors for electronic devices: a review, Solid-State Electron. 49, 1875 (2005)
5. T. Whitaker, Compound Semiconductor (January and September, 2004)
Cited by
24 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献