Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes-Reference-Cited by-同舟云学术

Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes

Published:2015-03-21 Issue:11 Volume:117 Page:113107
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Guo Wei¹^ORCID,Kirste Ronny¹,Bryan Zachary¹,Bryan Isaac¹,Gerhold Michael²,Collazo Ramón¹,Sitar Zlatko¹

Affiliation:

1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919, USA

2. Engineering Science Directorate, Army Research Office, Research Triangle Park, North Carolina 27703, USA

Funder

National Science Foundation (NSF)

Army Research Office (ARO)

U.S. Army Research Laboratory (ARL)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4915903

Reference38 articles.

1. Growth and applications of Group III-nitrides

2. Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures

3. Light extraction from GaN-based light emitting diode structures with a noninvasive two-dimensional photonic crystal

4. Recent advances of conductive adhesives as a lead-free alternative in electronic packaging: Materials, processing, reliability and applications

5. Truncated-inverted-pyramid light emitting diode geometry optimisation using ray tracing technique

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