The effect of N-polar GaN domains as Ohmic contacts
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3491173
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5. Proceedings of the 51st TMS Electronic Materials Conference;Nidhi N.,2009
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3. Polarity control and fabrication of lateral polarity structures of III-nitride thin films and devices: progress and prospects;Journal of Physics D: Applied Physics;2020-09-21
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5. Polarity Control of GaN and Realization of GaN Schottky Barrier Diode Based on Lateral Polarity Structure;IEEE Transactions on Electron Devices;2017-11
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