Structural characterization of InAs/GaAs quantum-dot nanostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1382855
Reference14 articles.
1. InGaAs-GaAs quantum-dot lasers
2. Strong normal-incidence infrared absorption and photo-current spectra from highly uniform (In,Ga)As/GaAs quantum dot structures
3. Trapping of photogenerated carriers by InAs quantum dots and persistent photoconductivity in novel GaAs/n-AlGaAs field-effect transistor structures
4. Influence of Long-Range Lateral Ordering in Structures with Quantum Dots on the Spatial Distribution of Diffracted X-Ray Radiation
5. High-quality InAs/GaAs quantum dots grown by low-pressure metalorganic vapor-phase epitaxy
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3. Evaluation of electronic transport properties and conduction band offsets of asymmetric InAs/InxGa1−xAs/GaAs dot-in-well structures;Journal of Physics D: Applied Physics;2012-08-28
4. Properties of wetting layer states in low density InAs quantum dot nanostructures emitting at 1.3 μm: Effects of InGaAs capping;Journal of Applied Physics;2010-12
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