Properties of wetting layer states in low density InAs quantum dot nanostructures emitting at 1.3 μm: Effects of InGaAs capping
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3518049
Reference34 articles.
1. Electrically Driven Single-Photon Source
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1. Wetting layer and size effects on the nonlinear optical properties of semi oblate and prolate Si0.7Ge0.3/Si quantum dots;Current Applied Physics;2021-05
2. Room temperature operation and low dark current of In0.15Ga0.85As/InAs/In0.15Ga0.85As dot-in-well short-wave infrared photodetector: Experimental and theoretical correlation;Superlattices and Microstructures;2020-12
3. Anomalous Stranski-Krastanov growth of (111)-oriented quantum dots with tunable wetting layer thickness;Scientific Reports;2019-12
4. Ultrafast Carrier Redistribution in Single InAs Quantum Dots Mediated by Wetting-Layer Dynamics;Physical Review Applied;2019-05-15
5. InAs quantum dots grown on metamorphic buffers as non-classical light sources at telecom C-band: a review;Semiconductor Science and Technology;2019-04-10
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