Sensitive plasma etching endpoint detection using tunable diode laser absorption spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111468
Reference12 articles.
1. A Laser Interferometer System to Monitor Dry Etching of Patterned Silicon
2. End Point Determination of Aluminum CCl4 Plasma Etching by Optical Emission Spectroscopy
3. A Study of the Optical Emission from an rf Plasma during Semiconductor Etching
4. Conduction and tritium diffusion studies in single crystals of potassium hydrogen sulfate
5. End-point determination by reflected power monitoring
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1. Etching: Endpoint Detection;Encyclopedia of Plasma Technology;2016-12-12
2. On treatment of ultra-low-k SiCOH in CF4 plasmas: correlation between the concentration of etching products and etching rate;Applied Physics B;2015-03-07
3. Analysis and modeling of the optical endpoint signal for precision etching;Journal of the Korean Physical Society;2013-01
4. Origin of electrical signals for plasma etching end point detection: Comparison of end point signals and electron density;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2012-09
5. Wafer2Wafer Etch Monitor via In Situ QCLAS;IEEE Transactions on Plasma Science;2009-12
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